“Atomi layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability,” ECS Trans. 1, p.15, 2006.


“N-type band edge work function demonstration using PEALD-HfSiN gate electrodes on high-k dielectrics”, Proc. of ALD conference, 2006.

“Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices,” Characterization and Metrology for ULSI technology, 2005. (Invited)

“The Effective Work Function of Plasma Injection-Atomic Layer Deposition (PI-ALD) Metal Nitride Electrodes on High-k Dielectric Materials,” AVS ALD symposium, 2005.

“Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability,” AVS ALD symposium, 2005.