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exel
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exel2014-09-02 10:43:352014-09-02 10:43:38"Effects of Hf and Zr implanted into Si substrates on the electrical properties of MOS devices,” AIP conference, 2001
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exel
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exel2014-09-02 10:40:172014-09-02 10:40:20 “Dopant penetration effects on polysilicon gate HfO2 MOSFET,” Proceeding of VLSI Symposium, p.131, 2001
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exel2014-09-02 10:38:222014-09-02 10:38:25“High-K Gate Dielectrics: ZrO2, HfO2, and Their Silicates,” ECS symposium on Gate Stacks for Nanoscale CMOS I, 2001. (Invited)
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exel2014-09-02 10:36:212014-09-02 10:36:24" MOSFET Devices with Polysilicon Electrode on Single-Layer HfO2 High-K Dielectrics,” Tech. Dig. of International Electron Device Meetings, p.35, 2000
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exel
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exel2014-09-02 10:34:342014-09-02 10:34:45“Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å),” Tech Dig. of Int. Electron Device Meetings, p.61, 2000.
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exel2014-09-02 10:32:472014-09-02 10:33:00 "Single-layer thin HfO2 gate dieletric with n+-polysilicon gate,”Proc. of Symposium on VLSI technology, 2000