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exel
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exel2014-09-02 10:43:352014-09-02 10:43:38"Effects of Hf and Zr implanted into Si substrates on the electrical properties of MOS devices,” AIP conference, 2001
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exel
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exel2014-09-02 10:34:342014-09-02 10:34:45“Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å),” Tech Dig. of Int. Electron Device Meetings, p.61, 2000.
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exel
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exel2014-09-02 10:32:472014-09-02 10:33:00 "Single-layer thin HfO2 gate dieletric with n+-polysilicon gate,”Proc. of Symposium on VLSI technology, 2000
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exel
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exel2014-09-02 10:30:522014-09-02 10:30:55"Performance of MOSFETs with ultrathin ZrO2 and Zr silicate gate dieletrics,” Proc. of Symposium on VLSI technology, 2000
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exel
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exel2014-09-02 10:28:582014-09-02 10:29:05 "Processing effect and electrical characteristics of ZrO2 formed by RTP oxidation of Zr,” ECS spring meeting, Ontario, 2000
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exel
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exel2014-09-02 10:27:352014-09-02 10:27:37"Hafnium and Zirconium based High-k dielectrics,” MRS workshop on High-k gate dielectrics, New Orleans, 2000. (Invited)