“Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stcak MOSFETs”,Microelectronics Eng., 88, 3399-3403, Dec. 2011.

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“Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics”,Microelectronics Eng., 88, 3415-3418, Dec. 2011

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“Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2,” Jpn. J. of Appl. Phys. 50(10), Part 2 (2011).

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“Conduction mechanism and reliability characteristics of a metal-insulator-metal capacitor with single ZrO2 layer ,” Jpn. J. of Appl. Phys. 50(4), Part 2, 04DD02, Apr. 2011.

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