“Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in Inverter Circuit for FPGA Applications,” IEEE Elect. Dev. Lett.,32(12), p.1665, Dec. 2011.

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“Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations,” Appl. Phys. Lett., 99(19),192110,Nov.,2011.

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“Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device ,” Nanotechnology, 22(25), p.254023, May. 2011.

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