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“Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs,” Ext. Abs. of Symp. On Solid State Device and Materials, p.362, 2008

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“A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs,” Microelectronics Engineering, 88, p.3411, Dec. 2011

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