“Characterization of ultra-thin dielectric using time domain reflectometry” presented at Int. Workshop on Dielectric Thin Films. (IWDTF) , 2013.

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“The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate”, Proc. Of Symp. On VLSI Technology, p.56, 2008

“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT”, Proc. Of Symp. On VLSI Technology, p.92, 2008.

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” Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization,” Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)

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