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“Capacitance-voltage measurement of leaky Al2O3 MIM capacitor using Time Domain Reflectometry (TDR) ,” Korea Semiconductor Conference (KSC), Feb., 2012.

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“Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric, “ Ext. Abs. of Symp. On Solid State Device and Materials, p.22, 2008.

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“Achieving Low Vt ＜-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications,” Proc. of VLSI-TSA, 2008.

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“Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, Tech. Dig. of IEDM, p.543, 2007.

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“Mechanism of Vtb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function ”, Tech. Dig. of IEDM, p.337, 2007.

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