“Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” Tech. Dig. of IEDM, 2006.

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“Atomi layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability,” ECS Trans. 1, p.15, 2006.

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“Detection of Electron Trap Generation Due to Constant Voltage Stress on High-κ Gate Stacks”, Proc. of IRPS, p.169 , 2006.

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