“Intrinsic characteristics of high-k devices and implications of transient charging effects,” Tech.Dig. of IEDM, p.859, 2004. (Invited)

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“Integration Issues of High-K Gate Stack: Process-Induced Charging,” International Reliability Physics Symposium, p.479, 2004. (Invited)

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“Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface,” MRS spring meeting, San Francisco, 2004