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“Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” Tech. Dig. of IEDM, 2006.

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“High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization,” Tech. Dig. of IEDM, p.437, 2005.

“Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate,” Carbon,68, p.791-797 (2014).

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