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exel
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exel2014-09-03 14:35:222014-09-03 14:35:25“Method for measuring capacitance”, U.S. patentNo. 6828630, 2009.06.16
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exel
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exel2014-09-02 16:51:452014-09-02 16:51:49“Dielectric Breakdown characteristics of stacked high-k dielectrics”, ECS, San Francisco, May, 2009. , Electrochem. Soc. Transaction, 19(2), p.289, 2009. (Invited)
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exel2014-09-02 16:44:522014-09-02 16:44:55“Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric, “ Ext. Abs. of Symp. On Solid State Device and Materials, p.22, 2008.
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exel2014-09-02 16:37:102014-09-02 16:37:21“Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, Tech. Dig. of IEDM, p.543, 2007.
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exel2014-09-02 16:36:222014-09-02 16:36:25 “Mechanism of Vtb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function ”, Tech. Dig. of IEDM, p.337, 2007.
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exel2014-09-02 16:35:382014-09-02 16:35:42 “Flexible, simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP”,Tech. Dig. of IEDM, p.57, 2007.
