“Dielectric Breakdown characteristics of stacked high-k dielectrics”, ECS, San Francisco, May, 2009. , Electrochem. Soc. Transaction, 19(2), p.289, 2009. (Invited)

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“Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric, “ Ext. Abs. of Symp. On Solid State Device and Materials, p.22, 2008.

“Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, Tech. Dig. of IEDM, p.543, 2007.

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“Mechanism of Vtb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function ”, Tech. Dig. of IEDM, p.337, 2007.

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