“Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application”, Proc. of Int. Electron Device Meeting, p.45, 2008.

Download

“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT”, Proc. Of Symp. On VLSI Technology, p.92, 2008.

Download

“Tetragonal Phase Stabilization by Doping as Enabler of Highly Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM,” Tech. Dig. of IEDM, 2006.

“Electrical and Materials Characterization of Atomic Layer Deposited HfO2 Using Hf[N(CH3)C2H5]4 and O3 on HF Last Surface,” 11th Workshop on oxide electronics, 2004

“Stabilization of higher-k tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insultor-metal capacitors,” Appl. Phys. Lett., 91(7), 072902, 2007.

“Stabilization of Higher-k Tetragonal HfO2 by SiO2 Admixture Enabling Thermally Stable Metal Insulator Metal Capacitors”, Appl. Phys. Lett., 91, 072902, 2007.

Download