“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT”, Proc. Of Symp. On VLSI Technology, p.92, 2008.

Download

“Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes,” Ext. Abs. of SSDM, p.14, 2007.

“Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off,” Proc. of VLSI-TSA, 2007

Download

“Fermi-level Pinning and Threshold Voltage Roll-Off Phenomena at Low Effective Oxide Thicknesses for p-MOS Work Function Metal Gates”, ISAGST, 2006.