“Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application”, Proc. of Int. Electron Device Meeting, p.45, 2008.

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“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT”, Proc. Of Symp. On VLSI Technology, p.92, 2008.

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“Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance,” Proc. of VLSI-TSA, 2008.

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“Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, Tech. Dig. of IEDM, p.543, 2007.

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