“Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” Tech. Dig. of IEDM, 2006.


“Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability,” AVS ALD symposium, 2005.

“Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2,” Proc. of ESSDERC, 2005.

“Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET,” Ext. Abs. of Symp. on Solid State Device and Materials, 2005.

“High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors,” ISTC, 2005. (Invited)