“Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” Tech. Dig. of IEDM, 2006.

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“Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability,” AVS ALD symposium, 2005.

“Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2,” Proc. of ESSDERC, 2005.

“Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET,” Ext. Abs. of Symp. on Solid State Device and Materials, 2005.

“High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors,” ISTC, 2005. (Invited)