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exel
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exel2014-09-02 16:05:242014-09-02 16:08:27“Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” Tech. Dig. of IEDM, 2006.
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exel
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exel2014-09-02 15:22:322014-09-02 15:23:07 “Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability,” AVS ALD symposium, 2005.
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exel2014-09-02 15:19:312014-09-02 15:19:34 “Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2,” Proc. of ESSDERC, 2005.
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exel2014-09-02 15:18:272014-09-02 15:18:29 “Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET,” Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
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exel2014-09-02 15:16:342014-09-02 15:16:37 “High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors,” ISTC, 2005. (Invited)
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exel2014-09-02 15:01:292014-09-02 15:01:36“Integration of Dual Metal Gate CMOS with TaSiN and Ru Gate Electrodes on HfO2 Gate Dielectric,” Proc. of VLSI, p.50, 2005.
