“Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2,” SISC, 2005.

“Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric,” Proc. of IRPS, p.646, 2005.

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“Improved Interface Quality and Charge-Trapping Characteristics of MOSFETs With High-k Gate Dielectric,” IEEE Elec. Dev. Lett., 26. p.725, 2005

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