“New insight into PBTI evaluation method for nMOSFETs with stacked high-k/IL gate dielectric,” IEEE Elect. Dev. Lett., Sep. 2012

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“Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device ,” Nanotechnology, 22(25), p.254023, May. 2011.

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“Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness,” J. Appl. Phys., 107(3), AN. 034504, Feb. 2010.

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“The effect of nano-scale non-uniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices,” IEEE Elec. Dev. Lett., 29, p.54, Jan. 2008.

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