“Fermi-level Pinning and Threshold Voltage Roll-Off Phenomena at Low Effective Oxide Thicknesses for p-MOS Work Function Metal Gates”, ISAGST, 2006.

“NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks,” Ext. Abs. of Symp. on Solid State Device and Materials, 2005.

“Spectroscopic analysis of the process dependent microstructure of ultra-thin high-k gate dielectric film systems”, 5th International Symposium on Atomic Layer Characterization for New Materials and Devices, 2005.

“NBTI Dependence on Dielectric Thickness and Nitrogen concentration in Ultra-scaled HfSiON Dielectric/ ALD-TiN Gate Stacks”, Jpn. J. Appl. Phys., 45, p.2945, 2006.

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