“A Study on the Electrical Characterization methods for CdS channel MOSFETs”, presented at 18th Korean Conference on Semiconductors, 2011.

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“Atomi layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability,” ECS Trans. 1, p.15, 2006.

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“Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2,” Proc. of ESSDERC, 2005.

“High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors,” ISTC, 2005. (Invited)