“Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning”,Electrochem. Soc. Transaction, 19(1), p.269, 2009. (Invited)

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“A novel electrode induced strain engineering for High performance SOI finFET utilizing Si(110) channel for both nMOS and pMOS,” Tech. Dig. of IEDM, 2006.

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“Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics”, IEEE SOI Conference, 2006.

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