“A Comprehensive and Comparative Study of Interface and Bulk Characteristics of nMOSETs with La-Incorporated High-k Dielectrics”, Proc. of Int. Electron Device Meeting, p.111, 2008.

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“Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., 2007.

“Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stcak MOSFETs”,Microelectronics Eng., 88, 3399-3403, Dec. 2011.

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“Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs,“ Microelectronics Eng. 86(3), p.259, Mar. 2009.

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