“The effect of high pressure post metallization annealing in dilute oxygen ambient on effective work function of metal gate,” discussed at SISC, 2007.

“Modulation of TiSiN effective workfunction using high-pressure post metallization annealing in dilute oxygen ambient,” Appl. Phys. Lett. 92, p.263505, Jul. 2008.

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“The effect of nano-scale non-uniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices,” IEEE Elec. Dev. Lett., 29, p.54, Jan. 2008.

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