“Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application”, Proc. of Int. Electron Device Meeting, p.45, 2008.

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“Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics”, Proc. of Symp. on VLSI Tech., p.68, 2007.

“Higher Permittivity rare earth doped HfO2 and ZrO2 dielectrics for logic and memory applications”, Proc. of VLSI-TSA, 2007. (Invited)

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“Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” Tech. Dig. of IEDM, 2006.

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