“The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs Under Various Gate Stress Conditions”, Proc. of Int. Electron Device Meeting, p.115, 2008.

Download

“Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric, “ Ext. Abs. of Symp. On Solid State Device and Materials, p.22, 2008.

“Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs,” Ext. Abs. of Symp. On Solid State Device and Materials, p.362, 2008

“A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain,” Proc. of IRPS, 2008.

“PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics,” discussed at SISC, 2007.