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exel2014-09-02 16:47:232014-09-02 16:47:26“The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs Under Various Gate Stress Conditions", Proc. of Int. Electron Device Meeting, p.115, 2008.
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exel
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exel2014-09-02 16:44:522014-09-02 16:44:55“Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric, “ Ext. Abs. of Symp. On Solid State Device and Materials, p.22, 2008.
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exel2014-09-02 16:44:302014-09-02 16:44:33“Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs,” Ext. Abs. of Symp. On Solid State Device and Materials, p.362, 2008
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exel2014-09-02 16:42:012014-09-02 16:42:10 “A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain,” Proc. of IRPS, 2008.
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exel2014-09-02 16:41:362014-09-02 16:41:40 “New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs,” Proc. of Int. Rel. Phys. Symp., 2008.
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exel2014-09-02 16:34:192014-09-02 16:34:22“PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics,” discussed at SISC, 2007.