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“The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs Under Various Gate Stress Conditions”, Proc. of Int. Electron Device Meeting, p.115, 2008.

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“Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric, “ Ext. Abs. of Symp. On Solid State Device and Materials, p.22, 2008.

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“Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs,” Ext. Abs. of Symp. On Solid State Device and Materials, p.362, 2008

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“A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain,” Proc. of IRPS, 2008.

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“PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics,” discussed at SISC, 2007.

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