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exel
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exel2014-09-03 14:35:042014-09-03 14:35:04“Forming gate oxide having multiple thickness,” U.S. patent No. 7,160,771, 2007.
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exel
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exel2014-09-02 10:43:352014-09-02 10:43:38"Effects of Hf and Zr implanted into Si substrates on the electrical properties of MOS devices,” AIP conference, 2001
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exel
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exel2014-09-02 10:42:172014-09-02 10:42:21“High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN eldectrode and nitridation surface preparation,” Proceeding of Symposium VLSI Technology, p.15, 2001. (Highlight session paper)
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exel2014-09-02 10:40:172014-09-02 10:40:20 “Dopant penetration effects on polysilicon gate HfO2 MOSFET,” Proceeding of VLSI Symposium, p.131, 2001
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exel2014-09-02 10:38:222014-09-02 10:38:25“High-K Gate Dielectrics: ZrO2, HfO2, and Their Silicates,” ECS symposium on Gate Stacks for Nanoscale CMOS I, 2001. (Invited)
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exel2014-09-02 10:36:212014-09-02 10:36:24" MOSFET Devices with Polysilicon Electrode on Single-Layer HfO2 High-K Dielectrics,” Tech. Dig. of International Electron Device Meetings, p.35, 2000
