“High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN eldectrode and nitridation surface preparation,” Proceeding of Symposium VLSI Technology, p.15, 2001. (Highlight session paper)

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” MOSFET Devices with Polysilicon Electrode on Single-Layer HfO2 High-K Dielectrics,” Tech. Dig. of International Electron Device Meetings, p.35, 2000

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