“Interfacial Layer Dependence of HfSixOy Gate Stacks on Vt Instability and Charge Trapping Using Ultra-Short Pulse I-V Characterization ,” Proc. of IRPS, p.75, 2005.

“Intrinsic characteristics of high-k devices and implications of transient charging effects,” Tech.Dig. of IEDM, p.859, 2004. (Invited)

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