“Performance and reliability analysis of p-type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal”, J. Vac. Sci. Technol. B 28(6), Nov. 2010.

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“Effect of a Gd capping layer on electrical characteristics of Metal-Oxide-Semiconductor Field Effect Transistors with a TaC gate electrode and a HfSiON gate dielectric,” Appl. Phys. Lett., 95(19), AN.119113, Nov. 2009.

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