“Detection of Electron Trap Generation Due to Constant Voltage Stress on High-κ Gate Stacks”, Proc. of IRPS, p.169 , 2006.


“High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization,” Tech. Dig. of IEDM, p.437, 2005.

“Detection of Trap Generation in High-k Gate Stacks due to Constant Voltage Stress,” Proc. of Int. Integrated Rel. Workshop, p.78, 2005.

“Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2,” Proc. of ESSDERC, 2005.

“Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET,” Ext. Abs. of Symp. on Solid State Device and Materials, 2005.