“Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2,” Proc. of ESSDERC, 2005.

“High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors,” ISTC, 2005. (Invited)

“Intrinsic characteristics of high-k devices and implications of transient charging effects,” Tech.Dig. of IEDM, p.859, 2004. (Invited)