“A Novel Damage-Free High-k Etch Technique Using Neutral Beam Assisted Atomic Layer Etching (NBALE) for sub-32nm Technology Node Low Power Metal Gate/High-K Dielectric CMOSFETs”, Proc. of Int. Elect. Dev. Meeting, 2009

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“Relaxation of FN stress induced Vth shift in nMOSFETs with HfSiON and TiN gate,” Proc. of Device Research Conference, p.17, 2004

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