“Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories,” Microelectronics Engineering, 107, p.33-36, Jul. (2013).

“High Current Density and Nonlinearity Combination of Selection Device Based on TaOX/TiO2/TaOX Structure for One Selector-One Resistor Arrays,” ACS Nano, 6 (9), pp 8166–8172 , Sep. (2012).

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“Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in Inverter Circuit for FPGA Applications,” IEEE Elect. Dev. Lett.,32(12), p.1665, Dec. 2011.

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“Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations,” Appl. Phys. Lett., 99(19),192110,Nov.,2011.

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“Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device ,” Nanotechnology, 22(25), p.254023, May. 2011.

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