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exel2014-09-02 14:39:572014-09-02 14:40:00“Interfacial layer properties in high-k gate dielectric transistors,” ECS spring meeting, 2005.
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exel2014-09-02 14:35:442014-09-02 14:35:47“Intrinsic characteristics of high-k devices and implications of transient charging effects,” Tech.Dig. of IEDM, p.859, 2004. (Invited)
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exel2014-08-29 14:37:372014-08-29 14:37:40"Enhanced surface preparation technique for the Si/high-k intrerface," Diffusion and Defect data pt.B: Solid state pheonomena, 103-104, pp.11-14, (2005).
