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exel
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exel2014-09-02 16:51:002014-09-02 16:51:04"Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning",Electrochem. Soc. Transaction, 19(1), p.269, 2009. (Invited)
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exel
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exel2014-09-02 16:49:052014-09-02 16:49:08"Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application", Proc. of Int. Electron Device Meeting, p.45, 2008.
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exel
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exel2014-09-02 16:44:052014-09-02 16:44:15 "The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate", Proc. Of Symp. On VLSI Technology, p.56, 2008
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exel
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exel2014-09-02 16:43:342014-09-02 16:43:37“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT", Proc. Of Symp. On VLSI Technology, p.92, 2008.
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exel
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exel2014-09-02 16:41:362014-09-02 16:41:40 “New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs,” Proc. of Int. Rel. Phys. Symp., 2008.
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exel
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exel2014-09-02 16:39:012014-09-02 16:39:04"Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs", Proc. of VLSI-TSA, 2008.