“A Comprehensive and Comparative Study of Interface and Bulk Characteristics of nMOSETs with La-Incorporated High-k Dielectrics”, Proc. of Int. Electron Device Meeting, p.111, 2008.

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“Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stcak MOSFETs”,Microelectronics Eng., 88, 3399-3403, Dec. 2011.

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“Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics”,Microelectronics Eng., 88, 3415-3418, Dec. 2011

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“Conduction mechanism and reliability characteristics of a metal-insulator-metal capacitor with single ZrO2 layer ,” Jpn. J. of Appl. Phys. 50(4), Part 2, 04DD02, Apr. 2011.

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“Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGe1-x pMOSFETs with High-k/Metal Gate Stacks”, IEEE Electron Device Letters, 31, 11, p.1211-1214, Nov. 2010.

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