“Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration”, Proc. of symposium on VLSI technology, p.10, 2006.

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“High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization,” Tech. Dig. of IEDM, p.437, 2005.

“Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability,” AVS ALD symposium, 2005.