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exel
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exel2014-09-02 15:44:592014-09-02 15:45:08 “Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration”, Proc. of symposium on VLSI technology, p.10, 2006.
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exel2014-09-02 15:39:232014-09-02 15:39:34“Relationship of HfO2 Materials Properties and Transistor Performance”, VLSI-TSA, 2006.
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exel2014-09-02 15:32:572014-09-02 15:33:03“Impact of nitrogen on PBTI characteristics of HfSiON/TiN Gate Stacks”, Proc. of IRPS, p.325, 2006.
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exel2014-09-02 15:29:122014-09-02 15:29:15“High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization,” Tech. Dig. of IEDM, p.437, 2005.
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exel2014-09-02 15:26:332014-09-02 15:26:36“Enhanced Reliability In Ultra-Scaled HfSiON Gate Dielectrics Through Suppressed Crystallization,” SISC, 2005.
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exel2014-09-02 15:22:322014-09-02 15:23:07 “Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability,” AVS ALD symposium, 2005.
