“Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application”, Proc. of Int. Electron Device Meeting, p.45, 2008.

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“The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs Under Various Gate Stress Conditions”, Proc. of Int. Electron Device Meeting, p.115, 2008.

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“Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric, “ Ext. Abs. of Symp. On Solid State Device and Materials, p.22, 2008.

“The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate”, Proc. Of Symp. On VLSI Technology, p.56, 2008

“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT”, Proc. Of Symp. On VLSI Technology, p.92, 2008.

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