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exel2014-09-02 16:39:012014-09-02 16:39:04"Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs", Proc. of VLSI-TSA, 2008.
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exel2014-09-02 16:38:052014-09-02 16:38:08“Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance,” Proc. of VLSI-TSA, 2008.
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exel2014-09-02 16:20:232014-09-02 16:20:34“Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme,” Proc. of Symp. on VLSI Tech., p.154, 2007
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exel2014-08-29 16:27:322014-08-29 16:27:52"Review of alternative gate stack technology research during the last decade", Ceramist, 9, p.57,2006.
