“Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance,” Proc. of VLSI-TSA, 2008.

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“Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off,” Proc. of VLSI-TSA, 2007

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“Impact of the bottom interfacial layer on the threshold voltage and device reliability of fluorine incorporated PMOSFET with high-k/metal electrode,”, Proc. of IRPS, p.374, 2007.