“Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories,” Microelectronics Engineering, 107, p.33-36, Jul. (2013).

“Self-formed Schottky Barrier Induced Selector-less RRAM for Cross-point Memory Applications,” Phys. Status Solidi RRL, 6(11), p.454-456, Nov. (2012).

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“High Current Density and Nonlinearity Combination of Selection Device Based on TaOX/TiO2/TaOX Structure for One Selector-One Resistor Arrays,” ACS Nano, 6 (9), pp 8166–8172 , Sep. (2012).

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