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“Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning”,Electrochem. Soc. Transaction, 19(1), p.269, 2009. (Invited)

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“Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application”, Proc. of Int. Electron Device Meeting, p.45, 2008.

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“The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs Under Various Gate Stress Conditions”, Proc. of Int. Electron Device Meeting, p.115, 2008.

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“Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric,” Proc. of Int. Electron Device Meeting, p.791, 2008.

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