“Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application”, Proc. of Int. Electron Device Meeting, p.45, 2008.

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“Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric,” Proc. of Int. Electron Device Meeting, p.791, 2008.

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“Reliability characterization of metal electrode/high-k dielectric stacks for 45nm node beyond ”, Proc. of IWDTF, Tokyo. Japan, 2008. (invited)

“The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate”, Proc. Of Symp. On VLSI Technology, p.56, 2008

“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT”, Proc. Of Symp. On VLSI Technology, p.92, 2008.

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“Performance and Reliability characterization of the band edge high-k.metal gate MOSFETs withal-doped Hf-silicate gate dielectrics”, Proc. of Int. Rel. Phys. Symp., 2008.