“A Novel Damage-Free High-k Etch Technique Using Neutral Beam Assisted Atomic Layer Etching (NBALE) for sub-32nm Technology Node Low Power Metal Gate/High-K Dielectric CMOSFETs”, Proc. of Int. Elect. Dev. Meeting, 2009

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“Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application”, Proc. of Int. Electron Device Meeting, p.45, 2008.

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“A Comprehensive and Comparative Study of Interface and Bulk Characteristics of nMOSETs with La-Incorporated High-k Dielectrics”, Proc. of Int. Electron Device Meeting, p.111, 2008.

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“The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs Under Various Gate Stress Conditions”, Proc. of Int. Electron Device Meeting, p.115, 2008.

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