“Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration”, Proc. of symposium on VLSI technology, p.10, 2006.

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“High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization,” Tech. Dig. of IEDM, p.437, 2005.

“Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2,” Proc. of ESSDERC, 2005.

“Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications,” Proc. of VLSI, p.46, 2005.

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