“Achieving Low Vt <-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications,” Proc. of VLSI-TSA, 2008.

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“Mechanism of Vtb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function ”, Tech. Dig. of IEDM, p.337, 2007.

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“Band Edge Effective Work Function of Ru Based Metal Gate Electrode for pMOSFET,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., 2007. (Invited)

“Enhanced Process-Induced Strain using Metal Gate/High-k Dielectric Stack on Nano-scale CMOSFET”, Solid State Technology, September, 2007.