“A Novel Damage-Free High-k Etch Technique Using Neutral Beam Assisted Atomic Layer Etching (NBALE) for sub-32nm Technology Node Low Power Metal Gate/High-K Dielectric CMOSFETs”, Proc. of Int. Elect. Dev. Meeting, 2009

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“Plasma induced damage of aggressively scaled gate dielectric (EOT < 1.0 nm) in metal gate/high-k dielectric CMOSFETs,” Proc. of IRPS, 2008.

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“Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate,” Solid State Electronics, 86, p.75-78, (2013).

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