“Achieving Low Vt <-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications,” Proc. of VLSI-TSA, 2008.

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“Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off,” Proc. of VLSI-TSA, 2007

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“Tetragonal Phase Stabilization by Doping as Enabler of Highly Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM,” Tech. Dig. of IEDM, 2006.