글
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
0
0
exel
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
exel2014-09-02 16:40:332014-09-02 16:40:36“Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit,” Proc. of VLSI-TSA, 2008.
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
0
0
exel
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
exel2014-09-02 16:39:472014-09-02 16:39:50“Achieving Low Vt ＜-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications,” Proc. of VLSI-TSA, 2008.
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
0
0
exel
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
exel2014-09-02 16:24:322014-09-02 16:24:35 “High and low stress voltage instabilities in high-k gate stacks,” ECS Trans. ,8, p.99, 2007.
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
0
0
exel
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
exel2014-09-02 16:19:262014-09-02 16:19:41“Highly Manufacturable MoAlN PMOS Electrode for 32nm Low Standby Power Applications”, Proc. of Symp. on VLSI Tech.,p.160, 2007.
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
0
0
exel
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
exel2014-09-02 16:18:562014-09-02 16:18:59“Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off,” Proc. of VLSI-TSA, 2007
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
0
0
exel
https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif
exel2014-09-02 16:10:182014-09-02 16:11:19“Tetragonal Phase Stabilization by Doping as Enabler of Highly Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM,” Tech. Dig. of IEDM, 2006.
