“Carrier Recombination in High-k Dielectrics and its Impact on Transient Charge Effects in High-k Devices”, Proc. of IRPS, p.657 , 2006.

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“Effect of High-k Post-Deposition Cleaning in Improving CMOS Bias Instabilities and Mobility: A Potential Issue in Reliability of Dual Metal Gate Technology,” Proc. of IRPS, p.640, 2005.

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“NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics”, IEEE Elec. Dev. Lett., 27, p.802, 2006.

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