“Higher Permittivity rare earth doped HfO2 and ZrO2 dielectrics for logic and memory applications”, Proc. of VLSI-TSA, 2007. (Invited)

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“Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics”, Appl. Phys. Lett., 89, 242909, 2006.

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