“Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, Tech. Dig. of IEDM, p.543, 2007.

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“Mechanism of Vtb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function ”, Tech. Dig. of IEDM, p.337, 2007.

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“Band Edge Effective Work Function of Ru Based Metal Gate Electrode for pMOSFET,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., 2007. (Invited)

“Impact of the bottom interfacial layer on the threshold voltage and device reliability of fluorine incorporated PMOSFET with high-k/metal electrode,”, Proc. of IRPS, p.374, 2007.

“Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” Tech. Dig. of IEDM, 2006.

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